Reliable contacts to two-dimensional conduction layers
Identifieur interne : 011F82 ( Main/Repository ); précédent : 011F81; suivant : 011F83Reliable contacts to two-dimensional conduction layers
Auteurs : RBID : Pascal:00-0229347Descripteurs français
- Pascal (Inist)
- 7361E, 7340N, 7340K, 8432D, 8530F, 7350J, 7350T, Etude expérimentale, Aluminium alliage, Gallium arséniure, Gallium composé, Gaz électron 2 dimensions, Jonction à semiconducteur, Interface métal semiconducteur, Indium composé, Semiconducteur III-V, Fiabilité dispositif semiconducteur, Bruit dispositif semiconducteur, Transducteur effet Hall, Contact électrique.
English descriptors
- KwdEn :
- Aluminium alloys, Electric contacts, Experimental study, Gallium arsenides, Gallium compounds, Hall effect transducers, III-V semiconductors, Indium compounds, Semiconductor device noise, Semiconductor device reliability, Semiconductor junctions, Semiconductor-metal boundaries, Two-dimensional electron gas.
Abstract
For many experiments and device applications, electrical contacts to a two-dimensional conduction layer must remain reliable under repeated temperature cycling between 300 and 77 K or lower. This work introduces the use of a silicon-doped InAs contact to the AlGaAs/GaAs two-dimensional electron gas which demonstrates exceptional reliability under such temperature cycling. The noise spectrum of AlGaAs/GaAs contacted with silicon-doped InAs shows almost no dependence on bias current; this fact can be used to improve the performance of device applications such as Hall sensors. In addition, this work introduces an alternative two-dimensional conduction structure, highly mismatched InAs/GaP. InAs/GaP contacted with Ti/Au shows reliability equal to AlGaAs/GaAs contacted with silicon-doped InAs. The InAs/GaP material may be more desirable for some applications because of the lower temperature dependence of its electronic properties and potentially easier integration with silicon-based microelectronics. © 2000 American Institute of Physics.
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Mcelfresh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Department of Physics, Purdue University, West Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Duan, Zhan" uniqKey="Duan Z">Zhan Duan</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Electrical and Computer Engineering, Purdue University, West Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Mcinturff, D" uniqKey="Mcinturff D">D. Mcinturff</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Electrical and Computer Engineering, Purdue University, West Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Yulius, Aristo" uniqKey="Yulius A">Aristo Yulius</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>School of Electrical and Computer Engineering, Purdue University, West Lafayette</wicri:cityArea></affiliation></author><author><name sortKey="Chen, E H" uniqKey="Chen E">E.-H. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Woodall, J M" uniqKey="Woodall J">J. M. Woodall</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0229347</idno><date when="2000-05-29">2000-05-29</date><idno type="stanalyst">PASCAL 00-0229347 AIP</idno><idno type="RBID">Pascal:00-0229347</idno><idno type="wicri:Area/Main/Corpus">013223</idno><idno type="wicri:Area/Main/Repository">011F82</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium alloys</term><term>Electric contacts</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>Hall effect transducers</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor device noise</term><term>Semiconductor device reliability</term><term>Semiconductor junctions</term><term>Semiconductor-metal boundaries</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7340N</term><term>7340K</term><term>8432D</term><term>8530F</term><term>7350J</term><term>7350T</term><term>Etude expérimentale</term><term>Aluminium alliage</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Gaz électron 2 dimensions</term><term>Jonction à semiconducteur</term><term>Interface métal semiconducteur</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Fiabilité dispositif semiconducteur</term><term>Bruit dispositif semiconducteur</term><term>Transducteur effet Hall</term><term>Contact électrique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">For many experiments and device applications, electrical contacts to a two-dimensional conduction layer must remain reliable under repeated temperature cycling between 300 and 77 K or lower. This work introduces the use of a silicon-doped InAs contact to the AlGaAs/GaAs two-dimensional electron gas which demonstrates exceptional reliability under such temperature cycling. The noise spectrum of AlGaAs/GaAs contacted with silicon-doped InAs shows almost no dependence on bias current; this fact can be used to improve the performance of device applications such as Hall sensors. In addition, this work introduces an alternative two-dimensional conduction structure, highly mismatched InAs/GaP. InAs/GaP contacted with Ti/Au shows reliability equal to AlGaAs/GaAs contacted with silicon-doped InAs. The InAs/GaP material may be more desirable for some applications because of the lower temperature dependence of its electronic properties and potentially easier integration with silicon-based microelectronics. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Reliable contacts to two-dimensional conduction layers</s1></fA08><fA11 i1="01" i2="1"><s1>SOUW (Victor)</s1></fA11><fA11 i1="02" i2="1"><s1>LI (Shi)</s1></fA11><fA11 i1="03" i2="1"><s1>MCELFRESH (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>DUAN (Zhan)</s1></fA11><fA11 i1="05" i2="1"><s1>MCINTURFF (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>YULIUS (Aristo)</s1></fA11><fA11 i1="07" i2="1"><s1>CHEN (E.-H.)</s1></fA11><fA11 i1="08" i2="1"><s1>WOODALL (J. M.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Purdue University, West Lafayette, Indiana 47907</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>3307-3309</s1></fA20><fA21><s1>2000-05-29</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0229347</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>For many experiments and device applications, electrical contacts to a two-dimensional conduction layer must remain reliable under repeated temperature cycling between 300 and 77 K or lower. This work introduces the use of a silicon-doped InAs contact to the AlGaAs/GaAs two-dimensional electron gas which demonstrates exceptional reliability under such temperature cycling. The noise spectrum of AlGaAs/GaAs contacted with silicon-doped InAs shows almost no dependence on bias current; this fact can be used to improve the performance of device applications such as Hall sensors. In addition, this work introduces an alternative two-dimensional conduction structure, highly mismatched InAs/GaP. InAs/GaP contacted with Ti/Au shows reliability equal to AlGaAs/GaAs contacted with silicon-doped InAs. 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